FDB42AN15A0 Fairchild Semiconductor, FDB42AN15A0 Datasheet
FDB42AN15A0
Specifications of FDB42AN15A0
Available stocks
Related parts for FDB42AN15A0
FDB42AN15A0 Summary of contents
Page 1
... Electronic Valve Train Systems DRAIN TO-220AB (FLANGE) FDP SERIES T = 25°C unless otherwise noted C Parameter 10V 10V 10V, with C/ copper pad area systems certification. September 2002 D SOURCE DRAIN G GATE S Ratings Units 150 Figure 150 W 1. -55 to 175 o 1 C/W FDP42AN15A0 / FDB42AN15A0 Rev ...
Page 2
... 12A, dI /dt = 100A Tape Width Quantity 24mm 800 units N/A 50 units Min Typ Max 150 - - - - 150 250 100 0.036 0.042 - 0.040 0.060 - 0.090 0.107 - 2150 - - 225 - - 4.2 5.4 = 75V DD = 12A - 9 1.0mA - 204 FDP42AN15A0 / FDB42AN15A0 Rev. C Units ...
Page 3
... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDP42AN15A0 / FDB42AN15A0 Rev. C 175 ...
Page 4
... Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED DSS STARTING 150 C J 0.01 0 TIME IN AVALANCHE (ms) AV Capability = 20V V = 10V PULSE DURATION = DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDP42AN15A0 / FDB42AN15A0 Rev + =12A 200 ...
Page 5
... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 75V ISS 150 0 Figure 14. Gate Charge Waveforms for Constant = 250 A - 120 160 JUNCTION TEMPERATURE ( C) J WAVEFORMS IN DESCENDING ORDER 24A 12A GATE CHARGE (nC) g Gate Current FDP42AN15A0 / FDB42AN15A0 Rev. C 200 35 ...
Page 6
... Figure 19. Switching Time Test Circuit ©2002 Fairchild Semiconductor Corporation DUT 0.01 Figure 16. Unclamped Energy Waveforms gs2 DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDP42AN15A0 / FDB42AN15A0 Rev 10V 90% ...
Page 7
... application’s ambient never exceeded (EQ 0.1 is (0.645) DM Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Iches Squared (EQ. 3) Area in Centimeters Squared R = 26.51+ 19.84/(0.262+Area) EQ 26.51+ 128/(1.69+Area) EQ (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDP42AN15A0 / FDB42AN15A0 Rev ...
Page 8
... PSPICE Electrical Model .SUBCKT FDB42AN15A0 rev June 11, 2002 6.0e- 8e-10 Cin 6 8 2.1e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 159.5 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 4.81e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 4.63e-9 RLgate 1 9 48.1 RLdrain RLsource ...
Page 9
... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDP42AN15A0 / FDB42AN15A0 Rev. C DRAIN 2 SOURCE 3 ...
Page 10
... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDP42AN15A0 / FDB42AN15A0 Rev. C ...
Page 11
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...