IRFU224 Vishay, IRFU224 Datasheet - Page 3

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IRFU224

Manufacturer Part Number
IRFU224
Description
MOSFET N-CH 250V 3.8A I-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFU224

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 2.3A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
3.8A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
1.1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
1.1 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.8 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFU224

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU224
Manufacturer:
IR
Quantity:
11 259
Part Number:
IRFU224ATU
Manufacturer:
SAMSUNG
Quantity:
20 000
Company:
Part Number:
IRFU224PBF
Quantity:
70 000
IRFR224, IRFU224, SiHFR224, SiHFU224
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
= 25 °C
Fig. 3 - Typical Transfer Characteristics
C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
C
Document Number: 91271
www.vishay.com
S10-1122-Rev. B, 10-May-10
3

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