FDPF5N50NZF Fairchild Semiconductor, FDPF5N50NZF Datasheet - Page 3

• Manufacturer Part Number: FDPF5N50NZF
• Description: MOSFET N-CH 500V 4.2A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF5N50NZF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.57 Ohms
• Forward Transconductance Gfs (max / Min): 4.2 S
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 2.5 A to 4.2 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP5N50NZF / FDPF5N50NZF Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
0.03
800
600
400
200
0.1
3.6
3.2
2.8
2.4
2.0
1.6
1.2
10
1
0
0.1
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Note:
GS
1. V
2. f = 1MHz
=
Drain Current and Gate Voltage
GS
15.0 V
10.0 V
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
2
= 0V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
(
C ds = shorted
V
4
1
1
GS
= 10V
*Notes:
1. 250
2. T
)
6
C
C
C
iss
*Note: T
oss
rss
C
= 25

s Pulse Test
V
GS
o
C
10
8
C
= 20V
10
= 25
o
C
25
10
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.1
10
50
10
10
8
6
4
2
0
1
1
0.4
0
3
V
SD
Variation vs. Source Current
and Temperature
150
2
4
, Body Diode Forward Voltage [V]
V
Q
150
GS
o
g
C
, Total Gate Charge [nC]
, Gate-Source Voltage[V]
V
V
V
o
0.8
C
DS
DS
DS
= 100V
= 250V
= 400V
4
5
-55
*Notes:
25
25
1. V
2. 250
o
6
o
6
o
C
*Notes:
1. V
2. 250
C
C
*Note: I
1.2
DS
GS

= 20V
s Pulse Test

= 0V
s Pulse Test
D
8
7
= 4.2A
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1.6
10
8