IRFU9110 Vishay, IRFU9110 Datasheet - Page 6
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IRFU9110
Manufacturer Part Number
IRFU9110
Description
MOSFET P-CH 100V 3.1A I-PAK
Manufacturer
Vishay
Datasheet
1.IRFR9110.pdf
(8 pages)
Specifications of IRFU9110
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.7nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFU9110
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU9110
Manufacturer:
IR
Quantity:
77 665
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S-82992-Rev. B, 12-Jan-09
Document Number: 91279
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD