SI4434DY-T1-E3 Vishay, SI4434DY-T1-E3 Datasheet - Page 4

MOSFET N-CH 250V 2.1A 8-SOIC

SI4434DY-T1-E3

Manufacturer Part Number
SI4434DY-T1-E3
Description
MOSFET N-CH 250V 2.1A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4434DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
155 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Power - Max
1.56W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.155 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
14 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.1 A
Power Dissipation
1560 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
162mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4434DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4434DY-T1-E3
Manufacturer:
KAE
Quantity:
2 000
Part Number:
SI4434DY-T1-E3
Manufacturer:
VISHAY
Quantity:
10 000
Company:
Part Number:
SI4434DY-T1-E3
Quantity:
70 000
Si4434DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.5
- 1.0
- 1.5
1.0
0.5
0.0
0.01
- 50
0.1
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
50
I
D
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.001
0.01
100
0.1
10
100
1
10
0.1
-2
* V
Limited by
R
Safe Operating Area, Junction-to-Case
DS(on) *
125
GS
> minimum V
V
150
DS
Square Wave Pulse Duration (s)
1
Single Pulse
T
- Drain-to-Source Voltage (V)
C
10
= 25 °C
-1
GS
at which R
10
DS(on)
60
50
40
30
20
10
100
0
1
0.01
is specified
100 ms
1 ms
10 ms
1 s
10 s
DC
1000
0.1
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
Time (s)
T
t
A
1
S09-0322-Rev. D, 02-Mar-09
1
= P
t
2
Document Number: 72562
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 65 °C/W
10
600
100

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