FDPF5N50NZ Fairchild Semiconductor, FDPF5N50NZ Datasheet - Page 4

• Manufacturer Part Number: FDPF5N50NZ
• Description: MOSFET N-CH 500V 4.5A TO220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF5N50NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.38 Ohms
• Forward Transconductance Gfs (max / Min): 3.54 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP5N50NZ / FDPF5N50NZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Maximum Drain Current
0.01
0.1
5
4
3
2
1
0
30
10
1.2
1.1
1.0
0.9
0.8
25
1
-100
1
Operation in This Area
is Limited by R
vs. Case Temperature-FDP5N50NZ
vs. Temperature
50
T
-50
V
C
T
, Case Temperature [
DS
J
, Junction Temperature
, Drain-Source Voltage [V]
10
DS(on)
75
*Notes:
0
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
100
DC
o
50
o
C
10ms
100
C
o
1ms
C]
*Notes:
100
125
1. V
2. I
[
o
100

C
D
s
GS
]
= 250
= 0V
1000

150
A
150
(Continued)
4
Figure 10. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
0.1
-100
30
10
1
1
Operation in This Area
is Limited by R
vs. Case Temperature-FDPF5N50NZ
-50
vs. Temperature
T
J
, Junction Temperature
V
DS
, Drain-Source Voltage [V]
10
DS(on)
0
*Notes:
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
DC
50
o
10ms
o
C
100
C
1ms
*Notes:
[
1. V
2. I
o
100us
100
C
D
]
GS
= 2.25A
www.fairchildsemi.com
= 10V
1000
150