SI7434DP-T1-E3 Vishay, SI7434DP-T1-E3 Datasheet

MOSFET N-CH 250V 2.3A PPAK 8SOIC

SI7434DP-T1-E3

Manufacturer Part Number
SI7434DP-T1-E3
Description
MOSFET N-CH 250V 2.3A PPAK 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7434DP-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
155 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.155 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.3 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3.8A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
162mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7434DP-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7434DP-T1-E3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
SI7434DP-T1-E3
Manufacturer:
VIS
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72579
S09-0271-Rev. C, 16-Feb-09
Ordering Information: Si7434DP-T1-E3 (Lead (Pb)-free)
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
250
(V)
8
6.15 mm
D
0.155 at V
7
0.162 at V
D
Si7434DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
6
DS(on)
D
PowerPAK SO-8
Bottom View
5
GS
J
a
GS
D
a
= 150°C)
(Ω)
= 10 V
= 6 V
1
N-Channel 250-V (D-S) MOSFET
S
a
2
S
3
S
5.15 mm
a
4
b,c
G
I
A
D
3.8
3.7
= 25 °C, unless otherwise noted
(A)
Steady State
Steady State
L = 1.0 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• PWM-OptimizedTrenchFET
• 100 % R
• Avalanche Tested
• Primary Side Switch In:
Symbol
Symbol
T
R
R
J
Available
- Telecom Power Supplies
- Distributed Power Architectures
- Miniature Power Modules
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
Typical
10 s
3.8
3.0
4.3
5.2
3.3
1.5
19
52
- 55 to 150
± 20
250
260
8.4
40
13
Steady State
®
Maximum
Power MOSFET
2.3
1.8
1.6
1.9
1.2
1.8
24
65
Vishay Siliconix
G
N-Channel MOSFET
Si7434DP
www.vishay.com
D
S
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI7434DP-T1-E3

SI7434DP-T1-E3 Summary of contents

Page 1

... PowerPAK SO Bottom View Ordering Information: Si7434DP-T1-E3 (Lead (Pb)-free) Si7434DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150°C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si7434DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72579 S09-0271-Rev. C, 16-Feb- °C J 0.8 1.0 1.2 Si7434DP Vishay Siliconix 2500 2000 C iss 1500 1000 C oss 500 C rss 100 150 V - Drain-to-Source Voltage (V) DS Capacitance 2 3 2.0 1.5 1 ...

Page 4

... Si7434DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 0.5 I 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 100 0.01 0.001 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 = 250 µ 100 125 150 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72579. Document Number: 72579 S09-0271-Rev. C, 16-Feb- Square Wave Pulse Duration (s) Si7434DP Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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