FDPF13N50FT Fairchild Semiconductor, FDPF13N50FT Datasheet - Page 4

• Manufacturer Part Number: FDPF13N50FT
• Description: MOSFET N-CH 500V 12A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF13N50FT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1930pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.54 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP13N50F / FDPF13N50FT Rev.
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
14
12
10
-100
8
6
4
2
0
25
-50
vs. Temperature
vs. Case Temperature
50
T
T
J
C
, Junction Temperature
, Case Temperature
0
0.01
Figure 10. Transient Thermal Response Curve - FDPF13N50FT
75
0.1
1
5
10
50
0.5
0.05
0.2
0.02
0.01
-4
0.1
Single pulse
100
100
[
10
o
*Notes:
C
[
-3
1. V
2. I
]
o
125
C
D
150
GS
]
= 250
= 0V
µ
10
A
200
150
-2
Rectangular Pulse Duration [sec]
(Continued)
10
-1
4
Figure 8. Maximum Safe Operating Area
0.01
10
100
0.1
10
1
0
1
Operation in This Area
is Limited by R
*Notes:
1. Z
2. Duty Factor, D= t
3. T
P
10
DM
- FDPF13N50FT
θ
JM
V
1
JC
DS
(t) = 3
- T
, Drain-Source Voltage [V]
C
10
DS(on)
t
1
= P
t
o
2
C/W Max.
*Notes:
DM
10
1. T
2. T
3. Single Pulse
2
* Z
C
J
1
θ
= 150
/t
= 25
JC
2
(t)
o
C
o
100
C
DC
10
3
10ms
100
1ms
µ
s
www.fairchildsemi.com
30
µ
s
1000