FDPF8N50NZ Fairchild Semiconductor, FDPF8N50NZ Datasheet - Page 2

• Manufacturer Part Number: FDPF8N50NZ
• Description: MOSFET N-CH 500V 8A TO220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF8N50NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 735pF @ 25V
• Power - Max: 40.3W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.77 Ohms
• Forward Transconductance Gfs (max / Min): 6.3 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 8 A
• Power Dissipation: 40.3 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 14 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8N50NZ / FDPF8N50NZ Rev.A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.8mH, I
3. I
4. Pulse Test: Pulse width  300s, Duty Cycle  2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
Symbol
DSS
J
FDPF8N50NZ
8A, di/dt  200A/s, V
DSS
FDP8N50NZ
AS
= 8A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
 BV
FDPF8N50NZ
FDP8N50NZ
G
DSS
= 25, Starting T
Device
, Starting T
Parameter
J
= 25C
T
J
C
= 25C
= 25
o
C unless otherwise noted
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
(Note 4, 5)
V
R
(Note 4, 5)
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250A, V
= 250A, Referenced to 25
/dt = 100A/s 
= 25, V
= 500V, V
= 400V, T
= 0V, I
= ±25V, V
= 20V, I
= 25V, V
= 400V,I
= 250V, I
= 0V, I
= V
= 10V, I
= 10V
DS
Test Conditions
, I
2
SD
SD
D
Reel Size
D
GS
D

D
GS
D
GS
= 4A
= 8A
= 8A
C
= 4A
GS
DS
= 250A
= 8A
= 8A
= 10V
= 125
= 0V
= 0V, T
-
-
= 0V
= 0V
o
C
(Note 4)
C
= 25
o
(Note 4)
C
o
C
Tape Width
-
-
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.43
Typ.
0.77
228
565
0.5
6.3
80
14
17
34
43
27
5
4
6
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
0.85
±10
735
105
5.0
1.4
10
18
45
30
80
95
60
1
8
8
50
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
pF
pF
pF
A
A
ns
C
ns
ns
ns
ns

A
A
V
V
V
S
o
C