FDPF8N50NZ Fairchild Semiconductor, FDPF8N50NZ Datasheet - Page 4
FDPF8N50NZ
Manufacturer Part Number
FDPF8N50NZ
Description
MOSFET N-CH 500V 8A TO220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDPF8N50NZ.pdf
(10 pages)
Specifications of FDPF8N50NZ
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
735pF @ 25V
Power - Max
40.3W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.77 Ohms
Forward Transconductance Gfs (max / Min)
6.3 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
8 A
Power Dissipation
40.3 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
14 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDPF8N50NZ
Manufacturer:
Fairchi/ON
Quantity:
17 399
Company:
Part Number:
FDPF8N50NZF
Manufacturer:
Fairchi/ON
Quantity:
17 400
Company:
Part Number:
FDPF8N50NZU
Manufacturer:
Fairchi/ON
Quantity:
17 403
FDP8N50NZ / FDPF8N50NZ Rev.A
Typical Performance Characteristics
vs. Case Temperature
Figure 11. Maximum Drain Current
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
1.2
1.1
1.0
0.9
0.8
0.1
10
50
10
-100
8
6
4
2
0
1
25
1
- FDP8N50NZ
Operation in This Area
is Limited by R
vs. Temperature
-50
50
T
T
J
V
C
, Junction Temperature
DS
, Case Temperature
, Drain-Source Voltage [V]
10
DS(on)
75
0
*Notes:
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
100
50
o
C
o
100
10ms
C
[
DC
o
1ms
*Notes:
C
1. V
2. I
[
100
]
o
100
125
C
D
]
GS
= 250
s
= 0V
10
A
150
1000
s
150
(Continued)
4
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Figure 10. Maximum Safe Operating Area
-100
0.1
50
10
Figure 8. On-Resistance Variation
1
1
Operation in This Area
is Limited by R
- FDPF8N50NZ
-50
T J
V
DS
vs. Temperature
, Drain-Source Voltage [V]
10
DS(on)
0
ti
*Notes:
1. T
2. T
3. Single Pulse
T
C
J
50
= 150
= 25
DC
o
10ms
C
o
100
C
100
t
1ms
100
*Notes:
[
1. V
2. I
o
s
C]
D
150
GS
10
= 4A
www.fairchildsemi.com
= 10V
1000
s
200