IRFR9020TRL Vishay, IRFR9020TRL Datasheet - Page 6

• Manufacturer Part Number: IRFR9020TRL
• Description: MOSFET P-CH 50V 9.9A DPAK
• Manufacturer: Vishay

Specifications of IRFR9020TRL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.28 Ohms
• Drain-source Breakdown Voltage: - 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.9 A
• Power Dissipation: 42 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
www.vishay.com
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Fig. 13a - Maximum Avalanche vs. Starting Junction
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Temperature
Fig. 13b - Unclamped Inductive Test Circuit
Fig. 13c - Unclamped Inductive Waveforms
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S09-0074-Rev. A, 02-Feb-09
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Document Number: 90350
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