IRF634 Vishay, IRF634 Datasheet

MOSFET N-CH 250V 8.1A TO-220AB

IRF634

Manufacturer Part Number
IRF634
Description
MOSFET N-CH 250V 8.1A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF634

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 5.1A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
8.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
770pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
8.1A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
450mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF634
IRF634
IRF634IR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634
Manufacturer:
IR
Quantity:
1 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634A
Manufacturer:
FAIRCHILD
Quantity:
740
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634A
Manufacturer:
IR
Quantity:
12 500
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634ATSTU
Manufacturer:
Fairchi/ON
Quantity:
1 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634B
Manufacturer:
FAIRCHILD
Quantity:
4 250
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634B
Manufacturer:
FAIRCHILD
Quantity:
145
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634B
Manufacturer:
Fairchi/ON
Quantity:
90 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634FP
Manufacturer:
ST
Quantity:
50 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634FP
Manufacturer:
INFINEON
Quantity:
25
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634N
Manufacturer:
IR
Quantity:
12 500
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634S
Manufacturer:
IR
Quantity:
50
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634S
Manufacturer:
FAIRCHILD
Quantity:
5 888
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF634STRL
Manufacturer:
EPSON
Quantity:
95
Price:
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91034
S11-0509-B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 8.1 A, dI/dt  120 A/μs, V
= 50 V, starting T
()
TO-220AB
a
G
J
D
= 25 °C, L = 7.3 mH, R
S
c
a
a
b
V
DD
GS
 V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
 150 °C.
250
6.5
41
22
This datasheet is subject to change without notice.
g
= 25 , I
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
0.45
V
GS
AS
6-32 or M3 screw
at 10 V
= 8.1 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220AB
IRF634PbF
SiHF634-E3
IRF634
SiHF634
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
DM
I
AR
DS
GS
AR
D
AS
D
stg
design,
- 55 to + 150
IRF634, SiHF634
LIMIT
300
± 20
0.59
250
300
8.1
5.1
8.1
7.4
4.8
1.1
32
74
10
low
www.vishay.com/doc?91000
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

Related parts for IRF634

IRF634 Summary of contents

Page 1

... C SYMBOL ° 100 ° °C C dV/dt T for screw = 25  8.1 A (see fig. 12  150 °C. J This datasheet is subject to change without notice. IRF634, SiHF634 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT V 250 ± 8 5 0.59 W/° ...

Page 2

... IRF634, SiHF634 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... C 3.0 2.5 2.0 1.5 4.5 V 1.0 0.5 150 °C 0 91034_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF634, SiHF634 Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics I = 5.6 A ...

Page 4

... IRF634, SiHF634 Vishay Siliconix 1750 MHz iss rss gd 1400 oss ds 1050 C iss 700 C oss 350 C rss Drain-to-Source Voltage ( 91034_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 5 200 125 Total Gate Charge (nC) 91034_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms - 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF634, SiHF634 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...

Page 6

... IRF634, SiHF634 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91034_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel This datasheet is subject to change without notice. IRF634, SiHF634 Vishay Siliconix + + www.vishay.com www.vishay.com/doc?91000 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords