IRF634 Vishay, IRF634 Datasheet - Page 4

• Manufacturer Part Number: IRF634
• Description: MOSFET N-CH 250V 8.1A TO-220AB
• Manufacturer: Vishay

Specifications of IRF634

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.1A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF634; IRF634; IRF634IR

IRF634, SiHF634
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91034_05
91034_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1750
1400
1050
700
350
20
16
12
0
8
4
0
10
0
0
I
D
= 5.6 A
V
V
DS ,
10
DS
Q
G
Drain-to-Source Voltage (V)
= 50 V
V
, Total Gate Charge (nC)
DS
= 125 V
20
V
V
C
C
C
DS
GS
iss
rss
oss
C
C
C
= C
= 0 V, f = 1 MHz
= C
= 200 V
= C
iss
oss
rss
10
gs
gd
30
ds
1
+ C
+ C
gd
gd
For test circuit
see figure 13
, C
40
This datasheet is subject to change without notice.
ds
Shorted
50
91034_07
91034_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
0.1
10
-1
1
3
2
5
2
5
2
5
2
5
2
1
0
0.4
1
Fig. 8 - Maximum Safe Operating Area
150
2
V
V
DS
SD
°
C
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.6
5
10
T
T
Single Pulse
C
J
by R
= 150 °C
25
= 25 °C
2
0.8
°
DS(on)
C
5
www.vishay.com/doc?91000
Document Number: 91034
10
S11-0509-B, 21-Mar-11
2
1.0
2
V
1
10
GS
10
100
ms
= 0 V
µs
ms
µs
5
1.2
10
3