IRF634 Vishay, IRF634 Datasheet - Page 5

• Manufacturer Part Number: IRF634
• Description: MOSFET N-CH 250V 8.1A TO-220AB
• Manufacturer: Vishay

Specifications of IRF634

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.1A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF634; IRF634; IRF634IR

Document Number: 91034
S11-0509-B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91034_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
91034_11
10
8
6
4
2
0
25
10
0.1
10
-2
1
10
-5
0.05
0.02
0.01
0 - 0.5
0.2
0.1
50
T
C
, Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
10
-4
100
Single Pulse
(Thermal Response)
125
This datasheet is subject to change without notice.
10
t
-3
1
, Rectangular Pulse Duration (s)
150
10
-2
0.1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
Notes:
1. Duty Factor, D = t
2. Peak T
GS
t
d(on)
V
DS
t
r
1
j
= P
P
IRF634, SiHF634
DM
DM
D.U.T.
x Z
www.vishay.com/doc?91000
t
1
1
Vishay Siliconix
thJC
R
/t
D
2
t
d(off)
t
+ T
2
C
10
t
f
+
-
www.vishay.com
V
DD
5