FDPF8N50NZU Fairchild Semiconductor, FDPF8N50NZU Datasheet - Page 3

MOSFET N-CH 500V 6.5A TO-220F

FDPF8N50NZU

Manufacturer Part Number
FDPF8N50NZU
Description
MOSFET N-CH 500V 6.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF8N50NZU

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
735pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1 Ohm
Forward Transconductance Gfs (max / Min)
6.3 S
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
3.9 A to 6.5 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
14 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF8N50NZU
Manufacturer:
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Quantity:
17 403
Part Number:
FDPF8N50NZU
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Company:
Part Number:
FDPF8N50NZU
Quantity:
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FDP8N50NZU / FDPF8N50NZU Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
1200
0.03
Figure 1. On-Region Characteristics
900
600
300
0.1
2.0
1.6
1.2
0.8
0.4
30
10
1
0.03
0
0.1
0
V
GS
=
15.0 V
10.0 V
C
0.1
Drain Current and Gate Voltage
3
C
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
C
V
oss
iss
DS
rss
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
6
V
1
GS
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
= 10V
9
1
*Notes:
1. 250
2. T
V
*Note: T
12
GS
C
= 25
(
= 20V
C ds = shorted
s Pulse Test
*Note:
o
1. V
2. f = 1MHz
C
10
C
15
= 25
GS
10
= 0V
o
C
)
20
30
18
3
100
0.1
30
10
10
10
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
1
8
6
4
2
0
1
0.4
2
0
V
SD
0.8
3
, Body Diode Forward Voltage [V]
V
Q
Variation vs. Source Current
and Temperature
4
GS
g
150
, Total Gate Charge [nC]
, Gate-Source Voltage[V]
150
V
V
V
o
DS
DS
DS
C
o
1.2
C
6
= 100V
= 250V
= 400V
25
6
o
C
*Notes:
1.6
25
1. V
2. 250
9
*Notes:
1. V
2. 250
-55
o
*Note: I
C
DS
o
GS
C
= 20V
s Pulse Test
= 0V
s Pulse Test
8
2.0
12
D
= 6.5A
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2.4
15
10

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