IRF644STRLPBF Vishay, IRF644STRLPBF Datasheet

MOSFET N-CH 250V 14A D2PAK

IRF644STRLPBF

Manufacturer Part Number
IRF644STRLPBF
Description
MOSFET N-CH 250V 14A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF644STRLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
3.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF644STRLPBF
Manufacturer:
IR
Quantity:
20 000
Note
a. See device orientation.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91040
S10-2695-Rev. B, 29-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
DS
DS(on)
g
gs
gd
(Max.) (nC)
(nC)
(V)
(nC)
()
K
D
2
PAK (TO-263)
a
a
D
G
S
a
b
V
GS
e
= 10 V
G
D
SiHF644S-GE3
IRF644SPbF
SiHF644S-E3
IRF644S
SiHF644S
N-Channel MOSFET
e
Single
2
PAK (TO-263)
250
68
11
35
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.28
GS
at 10 V
T
T
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
accommodating die size up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
2
Definition
D
SiHF644STRL-GE3
SiHF644STL-E3
IRF644STRL
SiHF644STL
IRF644STRLPbF
PAK is suitable for high current applications because of
2
PAK (TO-263)
2
PAK is a surface mount power package capable of
power
SYMBOL
a
V
a
V
E
E
I
I
P
device
DM
I
AR
GS
DS
AS
AR
D
D
a
a
capability
a
design,
IRF644S, SiHF644S
and
LIMIT
0.025
D
SiHF644STRR-GE3
IRF644STRRPbF
SiHF644STR-E3
IRF644STRR
SiHF644STR
± 20
250
550
125
8.5
1.0
3.1
14
56
14
13
low
2
PAK (TO-263)
Vishay Siliconix
the
on-resistance
lowest
a
a
www.vishay.com
a
a
a
UNIT
W/°C
possible
mJ
mJ
W
V
A
A
and
1

Related parts for IRF644STRLPBF

IRF644STRLPBF Summary of contents

Page 1

... The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate typical surface mount application PAK (TO-263) D PAK (TO-263) SiHF644S-GE3 SiHF644STRL-GE3 IRF644SPbF IRF644STRLPbF SiHF644S-E3 SiHF644STL-E3 IRF644S IRF644STRL SiHF644S SiHF644STL = 25 °C, unless otherwise noted ° 100 ° ...

Page 2

... IRF644S, SiHF644S Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (T PARAMETER c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11 starting ° 4.5 mH  dI/dt  150 A/μs, V  ...

Page 3

... ° ° 7.9 A, dI/dt = 100 A/μ Intrinsic turn-on time is negligible (turn-on is dominated 4 µs Pulse Width ° 91040_02 = 25 °C Fig Typical Output Characteristics IRF644S, SiHF644S Vishay Siliconix MIN. TYP. MAX 1 250 500 b - 2.3 4 Top 8 7 ...

Page 4

... IRF644S, SiHF644S Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width - Gate-to-Source Voltage ( 91040_03 Fig Typical Transfer Characteristics 3 7 2.5 2.0 1.5 1.0 0.5 0 100 120 140 160 T Junction Temperature (° 91040_04 Fig Normalized On-Resistance vs. Temperature www.vishay.com 91040_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 91040_06 Fig ...

Page 5

... Drain-to-Source Voltage (V) 91040_08 DS Fig Maximum Safe Operating Area Document Number: 91040 S10-2695-Rev. B, 29-Nov-10 ° 0.9 1.1 1.0 91040_09 Fig Maximum Drain Current vs. Case Temperature 10 µs 100 µ IRF644S, SiHF644S Vishay Siliconix 100 125 T , Case Temperature (° D.U. Pulse width ≤ 1 µs Duty factor ≤ ...

Page 6

... IRF644S, SiHF644S Vishay Siliconix − 0.5 0.2 0.1 0.1 0.05 0.02 0. 91040_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91040_12c www.vishay.com 6 Single Pulse (Thermal Response Rectangular Pulse Duration (s) ...

Page 7

... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91040. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords