FQA11N90C_F109 Fairchild Semiconductor, FQA11N90C_F109 Datasheet
FQA11N90C_F109
Manufacturer Part Number
FQA11N90C_F109
Description
MOSFET N-CH 900V 11A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQA11N90C_F109.pdf
(8 pages)
Specifications of FQA11N90C_F109
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 5.5A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
3290pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQA11N90C_F109FQA11N90C-F109
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FQA11N90C_F109
Manufacturer:
TE
Quantity:
20
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Implementation of change:
Expected 1st Device Shipment Date: 2007/08/26
Earliest Year/Work Week of Changed Product: H35
Change Type Description: Passivation Material, Fab Process Change
Description of Change (From): There are no passivation layer.
Description of Change (To): Adding Passivation layer on front metal.
Reason for Change : To improve product quality.
Qual/REL Plan Numbers : Q20070212
All items were passed.
Qualification :
All items were passed.
Results/Discussion
Test: (Autoclave)
Lot
Q20070212AAACLV
Q20070212ABACLV
Q20070212ACACLV
Test: (High Temperature Gate Bias)
Lot
Q20070212AAHTGB
Q20070212AAHTGB
Q20070212ABHTGB
Q20070212ABHTGB
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Device
FQPF6N90C
FQPF6N90C
FQPF6N90C
FQPF6N90C
Device
FQPF6N90C
FQPF6N90C
FQPF6N90C
500-HOURS
0/77
0/77
96-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
0/77
Date Issued On : 2007/06/26
Date Created : 2007/05/17
Failure Code
Failure Code
PCN# : Q2072004
Pg. 1
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FQA11N90C_F109 Summary of contents
Page 1
... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...
Page 2
... FQA11N90C_F109 FQA8N100C FQA9N90C FQB5N60CTM_NL FQB8N60CFTM FQD5N60CTF FQD5N60CTM_WS FQD6N60CTM FQI6N60CTU FQP3N80C_NL FQP5N60C_F080 FQP6N80C FQP8N60C FQP8N60C_F105 FQP8N90C FQPF3N80CYDTU FQPF5N60C FQPF6N60C FQPF6N90C FQPF8N60C FQPF8N60CYDTU ...