IRFL9014TR Vishay, IRFL9014TR Datasheet - Page 2
![MOSFET P-CH 60V 1.8A SOT223](/photos/5/32/53237/sot-223_pkg_sml.jpg)
IRFL9014TR
Manufacturer Part Number
IRFL9014TR
Description
MOSFET P-CH 60V 1.8A SOT223
Manufacturer
Vishay
Datasheet
1.IRFL9014TR.pdf
(8 pages)
Specifications of IRFL9014TR
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 1.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.5 Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFL9014TR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFL9014TRPBF
Manufacturer:
ATMEL
Quantity:
1 001
Part Number:
IRFL9014TRPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
IRFL9014, SiHFL9014
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
www.vishay.com
2
Maximum Junction-to-Ambient
(PCB Mount)
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
DS
SD
DD
Temperature Coefficient
≤ - 6.7 A, dI/dt ≤ 90 A/µs, V
= - 25 V, starting T
a
J
= 25 °C, L = 50 mH, R
c
J
= 25 °C, unless otherwise noted
DD
≤ V
DS
, T
e
J
≤ 150 °C.
SYMBOL
SYMBOL
ΔV
R
V
G
t
t
I
I
C
R
V
C
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
L
DS
L
= 25 Ω, I
t
DS
oss
t
thJA
thJC
iss
rss
gd
fs
gs
r
f
D
S
g
C
/T
= 25 °C, unless otherwise noted
J
AS
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
= - 1.8 A (see fig. 12).
T
T
GS
GS
C
A
V
for 10 s
R
DS
= 25 °C
= 25 °C
G
= - 10 V
= - 10 V
Reference to 25 °C, I
= 24 Ω, R
= - 48 V, V
V
V
V
V
V
DD
f = 1.0 MHz, see fig. 5
DS
TYP.
TEST CONDITIONS
DS
DS
GS
-
-
= - 30 V, I
= - 25 V, I
= - 60 V, V
= V
= 0 V, I
V
V
V
GS
I
DS
D
D
GS
GS
GS
= 4.0 Ω, see fig. 10
= - 6.7 A, V
= ± 20 V
, I
= 25 V,
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 µA
D
= 250 µA
I
GS
D
= - 6.7 A,
SYMBOL
= 1.1 A
T
= 1.1 A
dV/dt
D
J
= 0 V
P
, T
= 1 mA
J
D
DS
= 125 °C
G
stg
b
= - 48 V,
b
MAX.
D
S
b
b
60
40
- 55 to + 150
MIN.
- 2.0
- 60
1.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
LIMIT
300
- 4.5
3.1
2.0
d
Document Number: 91195
S-81412-Rev. A, 07-Jul-08
- 0.059
TYP.
270
170
9.6
4.0
6.0
31
11
63
31
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
- 100
- 500
- 4.0
0.50
3.8
5.1
12
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V/ns
°C
W
UNIT
V/°C
nA
µA
nC
nH
pF
ns
V
V
Ω
S