FDA59N25 Fairchild Semiconductor, FDA59N25 Datasheet - Page 3

• Manufacturer Part Number: FDA59N25
• Description: MOSFET N-CH 250V 59A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA59N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 49 mOhm @ 29.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Input Capacitance (ciss) @ Vds: 4020pF @ 25V
• Power - Max: 392W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.049 Ohms
• Forward Transconductance Gfs (max / Min): 45 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 59 A
• Power Dissipation: 392 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 59A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 49mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA59N25 Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
8000
6000
4000
2000
10
10
10
2
1
0
10
0
10
0.15
0.12
0.09
0.06
0.03
0.00
-1
Top :
Bottom :
-1
0
Drain Current and Gate Voltage
10.0 V
15.0 V
6.0 V
8.0 V
7.0 V
6.5 V
V
GS
25
C
C
C
rss
oss
iss
V
V
DS
DS
50
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
0
D
0
, Drain Current [A]
V
75
GS
= 10V
100
C
C
C
iss
oss
rss
= C
= C
= C
V
125
10
GS
gs
10
gd
ds
1
* Notes :
* Note : T
+ C
= 20V
+ C
1
1. 250
2. T
gd
gd
C
(C
* Note ;
= 25
1. V
2. f = 1 MHz
µ
ds
150
s Pulse Test
J
= shorted)
= 25
GS
°
C
= 0 V
°
C
175
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
10
10
2
1
0
2
12
10
2
1
0
0.2
8
6
4
2
0
0
Variation vs. Source Current
and Temperatue
0.4
10
25
4
°
C
150
150
0.6
V
°
V
C
°
GS
20
C
SD
Q
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
G
, Total Gate Charge [nC]
25
0.8
°
6
C
V
V
V
30
DS
DS
DS
= 50V
= 125V
= 200V
-55
1.0
°
C
40
8
1.2
* Notes :
50
* Notes :
1. V
2. 250
1. V
2. 250
1.4
* Note : I
GS
DS
10
µ
= 0V
= 40V
µ
s Pulse Test
www.fairchildsemi.com
s Pulse Test
D
= 59A
60
1.6
12
1.8
70