FQA9N90_F109 Fairchild Semiconductor, FQA9N90_F109 Datasheet

MOSFET N-CH 900V 8.6A TO-3P

FQA9N90_F109

Manufacturer Part Number
FQA9N90_F109
Description
MOSFET N-CH 900V 8.6A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQA9N90_F109

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.3 Ohm @ 4.3A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
8.6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
2700pF @ 25V
Power - Max
240W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.3 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8.6 A
Power Dissipation
240 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FQA9N90_F109 Rev. A
FQA9N90_F109
900V N-Channel MOSFET
Features
• 8.6A, 900V, R
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 25pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 1.3Ω @V
G
D
S
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
= 25°C)
Parameter
Parameter
TO-3PN
FQA Series
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
Typ
0.24
--
--
FQA9N90_F109
-55 to +150
S
D
5.45
34.4
± 30
1.92
900
900
240
300
8.6
8.6
4.0
24
Max
0.52
40
--
QFET
November 2007
www.fairchildsemi.com
Units
Units
°C/W
°C/W
°C/W
W/°C
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQA9N90_F109 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FQA9N90_F109 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... V = 50V ≤ 8.6A, di/dt ≤200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQA9N90_F109 Rev. A Package Reel Size TO-3PN -- T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...

Page 3

... V = 20V GS 1.5 1.2 0 Drain Current [A] D Figure 5. Capacitance Characteristics 4000 C iss 3000 C oss 2000 C rss 1000 Drain-Source Voltage [V] DS FQA9N90_F109 Rev. A Figure 2. Transfer Characteristics ※ Notes : 1. 250µs Pulse Test ℃ Figure 4. Body Diode Forward Voltage 10V ※ Note : ℃ ...

Page 4

... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQA9N90_F109 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 Notes : ※ 250 µA 0.5 D 0.0 -100 100 150 200 o C] Figure 10. Maximum Drain Current 10 DS(on µ s 100 µ ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FQA9N90_F109 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FQA9N90_F109 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FQA9N90_F109 Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Green FPS™ Build it Now™ Green FPS™ e-Series™ CorePLUS™ GTO™ ...

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