FDPF20N50FT Fairchild Semiconductor, FDPF20N50FT Datasheet - Page 4

• Manufacturer Part Number: FDPF20N50FT
• Description: MOSFET N-CH 500V 20A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF20N50FT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3390pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.26 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 38500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP20N50F / FDPF20N50FT Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
100
200
1.2
1.1
1.0
0.9
0.8
0.1
10
-100
1
1
Operation in This Area
is Limited by R
-50
T
vs. Temperature
J
V
- FDPF20N50FT
, Junction Temperature
DS
, Drain-Source Voltage [V]
0.002
0.01
0
DS(on)
10
0.1
Figure 11. Transient Thermal Response Curve - FDP20N50F
1
10
*Notes:
-5
1. T
2. T
3. Single Pulse
single pulse
0.02
0.05
0.01
0.2
0.1
0.5
50
C
J
= 150
= 25
o
100
C
o
C
10
100
*Notes:
-4
1. V
2. I
[
o
C
D
150
10ms
]
GS
100
= 1mA
DC
1ms
= 0V
µ
s
Rectangular Pulse Duration [sec]
40
10
µ
200
s
-3
800
(Continued)
10
-2
4
0.01
100
200
Figure 8. Maximum Safe Operating Area
0.1
10
Figure 10. Maximum Drain Current
25
20
15
10
1
5
0
25
10
1
-1
*Notes:
Operation in This Area
is Limited by R
1. Z
2. Duty Factor, D= t
3. T
P
DM
θ
JM
JC
50
V
T
(t) = 0.5
- T
DS
- FDP20N50F
C
C
, Case Temperature
, Drain-Source Voltage [V]
10
P
= P
D M
vs. Case Temperature
t
1
0
t
t
10
1
o
2
DM
t
2
C/W Max.
DS(on)
75
* Z
1
θ
/t
JC
2
(t)
10
100
1
*Notes:
10 ms
1. T
2. T
3. Single Pulse
DC
[
100
100 ms
o
C
J
C
1 ms
= 150
= 25
]
125
100
o
o
C
C
µ
10
www.fairchildsemi.com
s
µ
s
150
800