HUF75645P3 Fairchild Semiconductor, HUF75645P3 Datasheet

MOSFET N-CH 100V 75A TO-220AB

HUF75645P3

Manufacturer Part Number
HUF75645P3
Description
MOSFET N-CH 100V 75A TO-220AB
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF75645P3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
238nC @ 20V
Input Capacitance (ciss) @ Vds
3790pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
310000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2001 Fairchild Semiconductor Corporation
75A, 100V, 0.014 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
Symbol
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
NOTES:
CAUTION: Stresses above those listed in “Absol24ute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
1. T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Continuous (T
Continuous (T
J
= 25
JEDEC TO-220AB
HUF75645P3
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
o
C to 150
(FLANGE)
DRAIN
C
C
o
= 25
= 100
SOURCE
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
o
G
C, V
o
DRAIN
C, V
GATE
= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
S
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
GATE
SOURCE
T
Data Sheet
For severe environments, see our Automotive HUFA series.
C
JEDEC TO-263AB
HUF75645S3S
= 25
o
C, Unless Otherwise Specified
(FLANGE)
DRAIN
Features
• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75645S3ST.
HUF75645P3
HUF75645S3S
- r
- Temperature Compensated PSPICE® and SABER™
- Spice and Saber Thermal Impedance Models
- www.fairchildsemi.com
PART NUMBER
Electrical Models
HUF75645P3, HUF75645S3S
DS(ON)
December 2001
J
, T
= 0.014
DGR
DSS
STG
pkg
DM
GS
D
D
D
L
HUF75645P3, HUF75645S3S
TO-220AB
TO-263AB
V
PACKAGE
GS
Figures 6, 14, 15
-55 to 175
Figure 4
10V
2.07
100
100
310
300
260
75
65
20
HUF75645P3, HUF75645S3S Rev. B
75645P
75645S
BRAND
UNITS
W/
o
o
o
W
V
V
V
A
A
C
C
C
o
C

Related parts for HUF75645P3

HUF75645P3 Summary of contents

Page 1

... HUF75645S3ST Unless Otherwise Specified , 0.014 10V V GS PACKAGE BRAND TO-220AB 75645P TO-263AB 75645S HUF75645P3, HUF75645S3S UNITS 100 DSS 100 DGR Figure 4 DM Figures 6, 14, 15 310 D 2.07 -55 to 175 STG 300 L 260 pkg HUF75645P3, HUF75645S3S Rev ...

Page 2

... 75A, dI /dt = 100A MIN TYP 100 - - - 0.0115 - - - - - - - 14 - 117 - 50V, - 198 - 106 = 1.0mA - 6 3790 - 810 - 230 MIN TYP - - - - - - - - HUF75645P3, HUF75645S3S Rev. B MAX UNITS - 250 A 100 0.014 o 0.48 C C/W 197 207 ns 238 nC 127 nC 8 MAX UNITS 1.25 V 1.00 V 145 ns 360 nC ...

Page 3

... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUF75645P3, HUF75645S3S Rev. B 175 ...

Page 4

... TIME IN AVALANCHE (ms) AV CAPABILITY 150 V = 20V 10V GS 120 90 60 PULSE DURATION = DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 1 1.0 0.8 0.6 0.4 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE HUF75645P3, HUF75645S3S Rev DSS +1] DSS DD o STARTING 0 = 250 120 160 200 o C) ...

Page 5

... FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 50V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. 20000 10000 1000 OSS 100 50 0.1 1 DRAIN TO SOURCE VOLTAGE ( 75A 50A 25A D 90 120 HUF75645P3, HUF75645S3S Rev 0V 1MHz ISS RSS GD 10 100 ...

Page 6

... FIGURE 18. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. SWITCHING TIME WAVEFORM HUF75645P3, HUF75645S3S Rev 20V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN 18 EBREAK - 16 21 MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF75645P3, HUF75645S3S Rev. B DRAIN 2 SOURCE 3 ...

Page 8

... LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUF75645P3, HUF75645S3S Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF75645P3, HUF75645S3S Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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