HUF75645P3 Fairchild Semiconductor, HUF75645P3 Datasheet - Page 3

• Manufacturer Part Number: HUF75645P3
• Description: MOSFET N-CH 100V 75A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75645P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 238nC @ 20V
• Input Capacitance (ciss) @ Vds: 3790pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1000
2000
1.2
1.0
0.8
0.6
0.4
0.2
100
50
0
10
0.01
0
0.1
-5
2
1
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
TEMPERATURE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
25
V
GS
T
50
C
= 10V
, CASE TEMPERATURE (
10
-4
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
SINGLE PULSE
-4
100
125
o
C)
FIGURE 4. PEAK CURRENT CAPABILITY
10
-3
10
150
-3
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
10
10
-2
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
80
60
40
20
0
25
CASE TEMPERATURE
50
10
10
-1
T
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
J
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
100
C
I = I
DM
= 25
25
x Z
HUF75645P3, HUF75645S3S Rev. B
o
10
P
10
C
JC
DM
o
0
1
0
125
/t
C DERATE PEAK
x R
2
175 - T
o
V
C)
150
JC
GS
t
1
+ T
t
= 10V
2
C
150
C
175
10
10
1
1