FQA62N25C Fairchild Semiconductor, FQA62N25C Datasheet - Page 5

• Manufacturer Part Number: FQA62N25C
• Description: MOSFET N-CH 250V 62A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA62N25C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 6280pF @ 25V
• Power - Max: 298W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 55 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 298000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 62A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 35mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
10V
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10V
10V
12V
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200nF
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50KΩ
50KΩ
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GS
Unclamped Inductive Switching Test Circuit & Waveforms
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V
300nF
300nF
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Resistive Switching Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
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Same Type
Same Type
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as DUT
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GS
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E
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10%
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90%
90%
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Time
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Rev. A, March 2004
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