IRFIB5N65A Vishay, IRFIB5N65A Datasheet - Page 2

• Manufacturer Part Number: IRFIB5N65A
• Description: MOSFET N-CH 650V 5.1A TO220FP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFIB5N65A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1417pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.93 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIB5N65A

IRFIB5N65A
Dynamic @ T
Diode Characteristics
Thermal Resistance
Avalanche Characteristics
Static @ T
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
R
R
I
I
E
I
E
I
I
V
t
Q
t
V
R
V
DSS
GSS
d(on)
r
d(off)
f
AR
SM
on
S
rr
2
fs
V
AS
AR
SD
g
gs
gd
iss
oss
rss
oss
oss
oss
(BR)DSS
GS(th)
rr
DS(on)
JC
JA
(BR)DSS
eff.
/ T
J
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
J
= 25°C (unless otherwise specified)
J
Junction-to-Case
Junction-to-Ambient
= 25°C (unless otherwise specified)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Parameter
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.9
650
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
1417 –––
1912 –––
–––
–––
–––
–––
177
0.67 –––
–––
–––
–––
493
7.0
–––
––– 0.93
–––
–––
–––
–––
––– -100
2.1
14
20
34
18
48
84
–––
–––
–––
–––
–––
–––
–––
–––
–––
739
–––
250
100
1.5
3.2
48
12
19
4.0
5.2
25
21
V/°C
nC
ns
pF
µC
µA
nA
ns
S
A
V
V
V
Typ.
Typ.
–––
–––
–––
–––
–––
V
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
I
integral reverse
V
D
D
DS
DS
GS
DD
GS
DS
GS
GS
GS
J
J
G
D
GS
GS
DS
DS
DS
GS
GS
= 5.2A
= 5.2A
= 25°C, I
= 25°C, I
= 62 ,See Fig. 10
= 9.1
= 50V, I
= 400V
= 10V, See Fig. 6 and 13
= 325V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
= 10V, I
= V
= 650V, V
= 520V, V
= 0V, I
= 30V
= -30V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
Conditions
= 250µA
= 5.2A, V
= 5.2A
Conditions
= 3.1A
= 250µA
= 3.1.A
GS
GS
= 0V to 520V
Max.
= 1.0V, ƒ = 1.0MHz
= 520V, ƒ = 1.0MHz
Max.
325
2.1
5.2
65
6
= 0V
= 0V, T
www.irf.com
D
= 1mA
GS
J
G
= 0V
= 125°C
Units
S
Units
°C/W
+L
mJ
mJ
A
D
D
S
)