IRFP9240 Vishay, IRFP9240 Datasheet - Page 7
![MOSFET P-CH 200V 12A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFP9240
Manufacturer Part Number
IRFP9240
Description
MOSFET P-CH 200V 12A TO-247AC
Manufacturer
Vishay
Datasheet
1.IRFP9240.pdf
(8 pages)
Specifications of IRFP9240
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 7.2A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.5 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFP9240
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP9240
Manufacturer:
IR
Quantity:
5 000
Company:
Part Number:
IRFP9240
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFP9240
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFP9240PBF
Manufacturer:
SANYO
Quantity:
401
Part Number:
IRFP9240PBF
Manufacturer:
IR
Quantity:
20 000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91239.
Document Number: 91239
S09-0005-Rev. A, 19-Jan-09
Re-applied
voltage
Reverse
recovery
current
+
R
-
Compliment N-Channel of D.U.T. for driver
D.U.T.
G
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
P.W.
= - 5 V for logic level and - 3 V drive devices
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For P-Channel
• dV/dt controlled by R
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
IRFP9240, SiHFP9240
GS
DD
= - 10 V*
+
-
V
DD
Vishay Siliconix
www.vishay.com
7