IRFP31N50LPBF Vishay, IRFP31N50LPBF Datasheet - Page 2

• Manufacturer Part Number: IRFP31N50LPBF
• Description: MOSFET N-CH 500V 31A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP31N50LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 5000pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 31 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP31N50LPBF

IRFP31N50L, SiHFP31N50L
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
C
DS
oss
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
eff. (ER) is a fixed capacitance that stores the same energy as C
J
= 25 °C, unless otherwise noted)
a
C
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
V
C
oss eff. (ER)
R
V
R
oss
t
t
R
R
C
C
I
I
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
RRM
GSS
DSS
g
Q
Q
DS
R
t
SM
I
t
thCS
thJC
t
t
thJA
DS
oss
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
g
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
V
GS
GS
GS
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
T
Reference to 25 °C, I
T
T
J
J
= 10 V
= 10 V
= 0 V
J
J
= 400 V, V
= 25 °C, I
= 25 °C, I
= 125 °C, dI/dt = 100 A/μs
= 125 °C, dI/dt = 100 A/μs
R
V
V
V
V
V
f = 1.0 MHz, see fig. 5
f = 1 MHz, open drain
oss
TYP.
0.24
TEST CONDITIONS
T
DS
DS
DD
g
GS
oss
DS
J
-
-
= 4.3 , see fig. 10
while V
= 25 °C, I
= 500 V, V
= V
= 250 V, I
= 0 V, I
= 50 V, I
while V
V
V
T
GS
V
V
DS
V
S
S
J
GS
GS
GS
DS
I
DS
D
= 25 °C
= 31 A, V
= 31 A, V
= ± 30 V
V
, I
= 25 V,
= 31 A, V
= 0 V,
see fig. 7 and 13
DS
= 0 V, T
= 400 V , f = 1.0 MHz
DS
= 1.0 V , f = 1.0 MHz
D
D
DS
D
= 250 μA
F
= 250 μA
is rising from 0 % to 80 % V
D
= 0 V to 400 V
GS
I
= 19 A
= 31 A
is rising from 0 % to 80 % V
D
= 31 A,
= 19 A
D
= 0 V
GS
GS
J
= 1 mA
DS
= 125 °C
G
b
= 0 V
= 0 V
b
= 400 V,
b
b
b
b
b
MAX.
b
0.26
D
S
c
40
-
MIN.
500
3.0
15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0488-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
DS
DS
Document Number: 91220
.
TYP.
5000
6630
0.28
0.15
.
553
155
276
200
115
170
220
570
1.1
1.2
7.9
59
28
54
53
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.18
210
100
124
250
330
860
5.0
2.0
1.5
1.8
S
50
58
31
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
mA
)
nA
μA
nC
nC
μC
pF
ns
ns


V
V
S
A
V
A