IRFP31N50LPBF Vishay, IRFP31N50LPBF Datasheet - Page 2
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IRFP31N50LPBF
Manufacturer Part Number
IRFP31N50LPBF
Description
MOSFET N-CH 500V 31A TO-247AC
Manufacturer
Vishay
Specifications of IRFP31N50LPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
5000pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
31 A
Power Dissipation
460000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
31A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
180mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP31N50LPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP31N50LPBF
Manufacturer:
TOREX
Quantity:
3 001
Company:
Part Number:
IRFP31N50LPBF
Manufacturer:
IR
Quantity:
4 250
Part Number:
IRFP31N50LPBF
Manufacturer:
IR
Quantity:
20 000
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
C
DS
oss
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
eff. (ER) is a fixed capacitance that stores the same energy as C
J
= 25 °C, unless otherwise noted)
a
C
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
V
C
oss eff. (ER)
R
V
R
oss
t
t
R
R
C
C
I
I
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
RRM
GSS
DSS
g
Q
Q
DS
R
t
SM
I
t
thCS
thJC
t
t
thJA
DS
oss
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
g
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
V
GS
GS
GS
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
T
Reference to 25 °C, I
T
T
J
J
= 10 V
= 10 V
= 0 V
J
J
= 400 V, V
= 25 °C, I
= 25 °C, I
= 125 °C, dI/dt = 100 A/μs
= 125 °C, dI/dt = 100 A/μs
R
V
V
V
V
V
f = 1.0 MHz, see fig. 5
f = 1 MHz, open drain
oss
TYP.
0.24
TEST CONDITIONS
T
DS
DS
DD
g
GS
oss
DS
J
-
-
= 4.3 , see fig. 10
while V
= 25 °C, I
= 500 V, V
= V
= 250 V, I
= 0 V, I
= 50 V, I
while V
V
V
T
GS
V
V
DS
V
S
S
J
GS
GS
GS
DS
I
DS
D
= 25 °C
= 31 A, V
= 31 A, V
= ± 30 V
V
, I
= 25 V,
= 31 A, V
= 0 V,
see fig. 7 and 13
DS
= 0 V, T
= 400 V , f = 1.0 MHz
DS
= 1.0 V , f = 1.0 MHz
D
D
DS
D
= 250 μA
F
= 250 μA
is rising from 0 % to 80 % V
D
= 0 V to 400 V
GS
I
= 19 A
= 31 A
is rising from 0 % to 80 % V
D
= 31 A,
= 19 A
D
= 0 V
GS
GS
J
= 1 mA
DS
= 125 °C
G
b
= 0 V
= 0 V
b
= 400 V,
b
b
b
b
b
MAX.
b
0.26
D
S
c
40
-
MIN.
500
3.0
15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0488-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
DS
DS
Document Number: 91220
.
TYP.
5000
6630
0.28
0.15
.
553
155
276
200
115
170
220
570
1.1
1.2
7.9
59
28
54
53
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.18
210
100
124
250
330
860
5.0
2.0
1.5
1.8
S
50
58
31
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
mA
)
nA
μA
nC
nC
μC
pF
ns
ns
V
V
S
A
V
A