BSS192,135 NXP Semiconductors, BSS192,135 Datasheet

MOSFET P-CH 240V 200MA SOT-89

BSS192,135

Manufacturer Part Number
BSS192,135
Description
MOSFET P-CH 240V 200MA SOT-89
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192135.pdf (12 pages)

Specifications of BSS192,135

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
240V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
2.8V @ 1mA
Input Capacitance (ciss) @ Vds
90pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
933943950135
BSS192 /T3
BSS192 /T3
Product specification
Supersedes data of 1997 Jun 20
book, halfpage
DATA SHEET
BSS192
P-channel enhancement mode
vertical D-MOS transistor
DISCRETE SEMICONDUCTORS
M3D109
2002 May 22

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BSS192,135 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 M3D109 2002 May 22 ...

Page 2

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line current interrupter in telephone sets Relay, high-speed and line transformer drivers. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor ...

Page 3

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V drain-source voltage (DC gate-source voltage (DC) GSO I drain current (DC peak drain ...

Page 4

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor handbook, halfpage Fig.2 Switching times test circuit. 1.2 handbook, halfpage P tot (W) 0.8 0 100 0 Fig.4 Power derating curve. 2002 May 22 handbook, ...

Page 5

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 1 handbook, halfpage ( ( ( (1) V ...

Page 6

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 2.5 handbook, halfpage k 2 1 DSon ---------------------------------------- - DSon I = 200 mA ...

Page 7

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 ...

Page 8

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS STATUS Objective data Development Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing ...

Page 9

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 2002 May 22 NOTES 9 Product specification BSS192 ...

Page 10

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 2002 May 22 NOTES 10 Product specification BSS192 ...

Page 11

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 2002 May 22 NOTES 11 Product specification BSS192 ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited ...

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