BSS192,135 NXP Semiconductors, BSS192,135 Datasheet - Page 2
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BSS192,135
Manufacturer Part Number
BSS192,135
Description
MOSFET P-CH 240V 200MA SOT-89
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192135.pdf
(12 pages)
Specifications of BSS192,135
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
240V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
2.8V @ 1mA
Input Capacitance (ciss) @ Vds
90pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
933943950135
BSS192 /T3
BSS192 /T3
BSS192 /T3
BSS192 /T3
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
QUICK REFERENCE DATA
2002 May 22
V
V
I
R
D
SYMBOL
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
Line current interrupter in telephone sets
Relay, high-speed and line transformer drivers.
DS
GSth
DSon
P-channel enhancement mode
vertical D-MOS transistor
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
PARAMETER
I
I
D
D
= 1 mA; V
= 200 mA; V
2
PINNING - SOT89
handbook, halfpage
Marking code: KB.
PIN
CONDITIONS
1
2
3
GS
Bottom view
GS
Fig.1 Simplified outline and symbol.
= V
1
= 10 V
DS
SYMBOL
2
d
g
s
3
source
drain
gate
MAM354
12
240
2.8
200
MAX.
Product specification
DESCRIPTION
g
BSS192
d
s
V
V
mA
UNIT