BSS192,135 NXP Semiconductors, BSS192,135 Datasheet - Page 4

• Manufacturer Part Number: BSS192,135
• Description: MOSFET P-CH 240V 200MA SOT-89
• Manufacturer: NXP Semiconductors

Specifications of BSS192,135

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 90pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 933943950135; BSS192 /T3; BSS192 /T3

Philips Semiconductors
2002 May 22
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
P tot
(W)
1.2
0.8
0.4
0
0
10 V
0 V
Fig.2 Switching times test circuit.
Fig.4 Power derating curve.
50
50
100
V DD = 50 V
I D
150
MBB689
T amb ( C)
MLC697
200
4
handbook, halfpage
handbook, halfpage
V
(1) C
(2) C
(3) C
Fig.5
GS
INPUT
OUTPUT
(pF)
160
120
C
= 0; T
80
40
0
iss
oss
rss
0
.
.
.
Capacitance as a function of drain-source
voltage; typical values.
j
Fig.3 Input and output waveforms.
= 25 C; f = 1 MHz.
5
10 %
t on
90 %
10
(1)
(2)
(3)
90 %
15
Product specification
t off
20
V DS (V)
BSS192
MDA180
MBB690
10 %
25