BSS192,135 NXP Semiconductors, BSS192,135 Datasheet - Page 4
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BSS192,135
Manufacturer Part Number
BSS192,135
Description
MOSFET P-CH 240V 200MA SOT-89
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192135.pdf
(12 pages)
Specifications of BSS192,135
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
240V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
2.8V @ 1mA
Input Capacitance (ciss) @ Vds
90pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
933943950135
BSS192 /T3
BSS192 /T3
BSS192 /T3
BSS192 /T3
Philips Semiconductors
2002 May 22
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
P tot
(W)
1.2
0.8
0.4
0
0
10 V
0 V
Fig.2 Switching times test circuit.
Fig.4 Power derating curve.
50
50
100
V DD = 50 V
I D
150
MBB689
T amb ( C)
MLC697
200
4
handbook, halfpage
handbook, halfpage
V
(1) C
(2) C
(3) C
Fig.5
GS
INPUT
OUTPUT
(pF)
160
120
C
= 0; T
80
40
0
iss
oss
rss
0
.
.
.
Capacitance as a function of drain-source
voltage; typical values.
j
Fig.3 Input and output waveforms.
= 25 C; f = 1 MHz.
5
10 %
t on
90 %
10
(1)
(2)
(3)
90 %
15
Product specification
t off
20
V DS (V)
BSS192
MDA180
MBB690
10 %
25