PMN50XP,165 NXP Semiconductors, PMN50XP,165 Datasheet - Page 9

• Manufacturer Part Number: PMN50XP,165
• Description: MOSFET P-CH 20V 4.8A 6TSOP
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMN50XP,165

• Package / Case: SC-74-6
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 20V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058528165; PMN50XP /T2; PMN50XP /T2

NXP Semiconductors
8. Revision history
Table 7.
PMN50XP_2
Product data sheet
Document ID
PMN50XP_2
Modifications:
PMN50XP_1
Revision history
Release date
20071002
20060123
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the company name where appropriate.
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 2 October 2007
P-channel TrenchMOS extremely low level FET
Change notice
-
-
Supersedes
PMN50XP_1
-
PMN50XP
© NXP B.V. 2007. All rights reserved.
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