BUK7880-55,135 NXP Semiconductors, BUK7880-55,135 Datasheet - Page 2

• Manufacturer Part Number: BUK7880-55,135
• Description: MOSFET N-CH 55V 7.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7880-55,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934050520135; BUK7880-55 /T3; BUK7880-55 /T3

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
April 1998
TrenchMOS
Standard level FET
SYMBOL
R
R
j
SYMBOL PARAMETER
V
V
I
I
R
mb
SYMBOL PARAMETER
g
C
C
C
t
t
t
t
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
DSS
GSS
d on
r
d off
f
DR
DRM
rr
= -55 to 175˚C unless otherwise specified
V
fs
(BR)DSS
GS(TO)
SD
th j-sp
th j-amb
DS(ON)
iss
oss
rss
rr
= 25˚C unless otherwise specified
(BR)GSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
PARAMETER
From junction to solder point
From junction to ambient
transistor
CONDITIONS
V
V
V
V
I
V
CONDITIONS
V
V
V
V
T
CONDITIONS
T
T
I
I
V
G
F
F
j
sp
sp
GS
DS
DS
GS
GS
DS
GS
DD
GS
GS
= 5 A; V
= 5 A; -dI
= 1 mA;
= 25˚C
= 25˚C
= 25˚C
= 0 V; I
= V
= 55 V; V
= 10 V
= 10 V; I
= 25 V; I
= 0 V; V
= 30 V; I
= 10 V; R
= -10 V; V
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.18
GS
; I
GS
2
D
D
F
DS
/dt = 100 A/ s;
D
D
D
= 0 V
= 0.25 mA
= 1 mA
GS
G
= 5 A
= 5 A; T
= 7 A;
R
= 25 V; f = 1 MHz
= 10 ;
= 30 V
= 0 V;
j
= 25˚C
T
T
T
T
T
T
j
j
j
j
j
j
= 150˚C
= 150˚C
= 150˚C
= 150˚C
= -55˚C
= -55˚C
TYP.
MIN.
MIN.
MIN.
12
1.2
-
55
50
16
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
0.05
0.04
0.85
365
110
0.2
65
60
15
18
12
38
3
4
9
-
-
-
-
-
-
-
-
-
-
Product specification
MAX.
15
70
BUK7880-55
MAX.
MAX.
MAX.
100
148
500
135
4.4
7.5
1.1
10
10
80
85
14
25
27
18
40
4
1
-
-
-
-
-
-
-
Rev 1.100
UNIT
K/W
K/W
UNIT
UNIT
UNIT
m
m
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
V
S
A
A
V
C
A
A
A
A