BUK7880-55,135 NXP Semiconductors, BUK7880-55,135 Datasheet - Page 5

• Manufacturer Part Number: BUK7880-55,135
• Description: MOSFET N-CH 55V 7.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7880-55,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934050520135; BUK7880-55 /T3; BUK7880-55 /T3

Philips Semiconductors
April 1998
TrenchMOS
Standard level FET
Fig.13. Typical turn-on gate-charge characteristics.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
VDS/V
V
.9
.8
.7
.6
.5
.4
.3
.2
.1
Fig.12. Typical capacitances, C
1
0
0.01
12
10
GS
I
C = f(V
8
6
4
2
0
D
0
0
= f(Q
= f(V
Fig.11. Sub-threshold drain current.
G
GS)
DS
); conditions: I
); conditions: V
; conditions: T
1
0.1
transistor
5
2%
2
VDS = 14V
QG/nC
1
D
j
= 7 A; parameter V
GS
= 25 ˚C; V
typ
VDS/V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
3
10
iss
10
, C
98%
VDS = 44V
DS
oss
4
= V
, C
GS
rss
100
DS
.
Coss
Crss
Ciss
15
5
5
VGS
IF/A
0
I
Fig.15. Normalised avalanche energy rating.
F
40
30
20
10
120
110
100
0
= f(V
90
80
70
60
50
40
30
20
10
0
0
Fig.14. Typical reverse diode current.
Fig.16. Avalanche energy test circuit.
W
20
WDSS%
W
SDS
DSS
DSS
); conditions: V
% = f(T
Tj/V =
RGS
40
0.5 LI
0.5
60
sp
150
); conditions: I
D
2
BV
80
Tmb / C
GS
DSS
1
L
= 0 V; parameter T
VSDS/V
VDS
100
BV
T.U.T.
25
Product specification
DSS
D
BUK7880-55
= 2.5 A
120
shunt
1.5
R 01
V
DD
-
+
140
Rev 1.100
-ID/100
VDD
j
2