BSP126,115 NXP Semiconductors, BSP126,115 Datasheet

MOSFET N-CH 250V 375MA SOT223

BSP126,115

Manufacturer Part Number
BSP126,115
Description
MOSFET N-CH 250V 375MA SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BSP126115.pdf (12 pages)

Specifications of BSP126,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
1.5W
Fet Type
MOSFET N-Channel, Metal Oxide
Vgs(th) (max) @ Id
2V @ 1mA
Current - Continuous Drain (id) @ 25° C
375mA
Drain To Source Voltage (vdss)
250V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 300mA, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.375 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934000540115::BSP126 T/R::BSP126 T/R
Product specification
Supersedes data of 1997 Jun 23
book, halfpage
DATA SHEET
BSP126
N-channel enhancement mode
vertical D-MOS transistor
DISCRETE SEMICONDUCTORS
M3D087
2002 Feb 19

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BSP126,115 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP126 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2002 Feb 19 ...

Page 2

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line current interruptor in telephone sets Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor ...

Page 3

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient; note 1 th j-a Note 1. Device mounted CHARACTERISTICS unless otherwise specified. j SYMBOL ...

Page 4

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor handbook, halfpage Fig.2 Switching times test circuit. 2 handbook, halfpage P tot (W) 1.6 1.2 0.8 0 100 Fig.4 Power derating curve. 2002 Feb ...

Page 5

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 1.6 handbook, halfpage I D (A) 1.4 1.2 1 0.8 0.6 0.4 0 Fig.6 Typical transfer characteristics. 250 ...

Page 6

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2 handbook, halfpage k 1 DSon ---------------------------------------- - DSon Typical R DSon: ( 250 ...

Page 7

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) UNIT ...

Page 8

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS STATUS Objective data Development Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing ...

Page 9

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2002 Feb 19 NOTES 9 Product specification BSP126 ...

Page 10

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2002 Feb 19 NOTES 10 Product specification BSP126 ...

Page 11

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2002 Feb 19 NOTES 11 Product specification BSP126 ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited ...

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