BUK7230-55A,118 NXP Semiconductors, BUK7230-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK7230-55A,118
• Description: MOSFET N-CH 55V 38A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7230-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1152pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Power Dissipation: 88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 68 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056244118; BUK7230-55A /T3; BUK7230-55A /T3

Philips Semiconductors
9397 750 07568
Product specification
Fig 13. Transfer characteristics; typical values.
V
DS
= 25 V
I D
(A)
80
70
60
50
40
30
20
10
0
0
2
4
T j = 25 o C
Fig 15. Reverse diode current; typical values.
6
V
GS
8
T j = 175 o C
= 0 V
I S
(A)
100
90
80
70
60
50
40
30
20
10
10
V GS (V)
0
0.0
03na41
Rev. 01 — 29 September 2000
12
0.2
0.4
0.6
T j = 175 o C
0.8
Fig 14. Turn-on gate charge characteristics; typical
1.0
T
j
T j = 25 o C
= 25 C; I
1.2
values.
V GS
(V)
1.4
10
03na42
V SD (V)
9
8
7
6
5
4
3
2
1
0
0
D
1.6
= 25 A
TrenchMOS™ standard level FET
10
V DS = 14(V)
BUK7230-55A
© Philips Electronics N.V. 2000. All rights reserved.
20
V DS = 44(V)
Q G (nC)
30
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