PH1730AL,115 NXP Semiconductors, PH1730AL,115 Datasheet - Page 3

• Manufacturer Part Number: PH1730AL,115
• Description: MOSFET N-CH TRENCH 30V LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH1730AL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 77.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 5057pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Gate Charge Qg: 36.2 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063082115

NXP Semiconductors
PH1730AL_3
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
120
100
10
10
10
(A)
80
60
40
20
10
I
D
0
4
3
2
1
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
(1)
Limit R
100
(1)
DSon
= V
150
DS
All information provided in this document is subject to legal disclaimers.
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Fig 2.
P
(%)
der
120
80
40
DC
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS logic level FET
50
100
V
DS
(V)
PH1730AL
100 μs
1 ms
10 ms
100 ms
10 μs
150
© NXP B.V. 2010. All rights reserved.
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