PH1730AL,115 NXP Semiconductors, PH1730AL,115 Datasheet - Page 7

• Manufacturer Part Number: PH1730AL,115
• Description: MOSFET N-CH TRENCH 30V LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH1730AL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 77.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 5057pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Gate Charge Qg: 36.2 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063082115

NXP Semiconductors
PH1730AL_3
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
8000
6000
4000
2000
10
10
10
10
10
10
(pF)
(A)
C
I
D
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Input and reverse transfer capacitances as a
2
0
C
C
iss
rss
4
min
1
6
typ
2
8
V
All information provided in this document is subject to legal disclaimers.
V
GS
003aab271
003aac455
GS
max
(V)
(V)
Rev. 03 — 12 January 2010
10
3
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
R
(mΩ)
V
DSon
GS (th)
(V)
3.0
2.5
2.0
1.5
1.0
3
2
1
0
-60
of gate-source voltage; typical values
junction temperature
2
N-channel TrenchMOS logic level FET
4
0
max
typ
min
60
6
PH1730AL
120
8
© NXP B.V. 2010. All rights reserved.
V
003aac451
003a a c337
T
GS
j
(°C)
(V)
180
10
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