PHB45NQ10T,118 NXP Semiconductors, PHB45NQ10T,118 Datasheet - Page 5

• Manufacturer Part Number: PHB45NQ10T,118
• Description: MOSFET N-CH 100V 47A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB45NQ10T,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 150W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055802118::PHB45NQ10T /T3::PHB45NQ10T /T3

NXP Semiconductors
6. Characteristics
Table 6.
PHB45NQ10T
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
I
I
V
V
V
V
V
V
I
T
V
T
V
R
T
I
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
S
S
j
j
from tab to centre of die ; T
from source lead to source bond pad ;
j
DS
DS
GS
GS
GS
GS
DS
DS
DS
G(ext)
= 25 °C
= 25 °C
= 25 °C
= 25 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 45 A; V
= 100 V; V
= 100 V; V
= 25 V; V
= 50 V; R
= 25 V; T
= 10 V; V
= -10 V; V
= 10 V; I
= 10 V; I
= 5.6 Ω; T
Rev. 02 — 8 July 2010
DS
GS
S
DS
DS
DS
D
D
/dt = -100 A/µs; V
j
GS
DS
L
DS
= 25 °C
= 25 A; T
= 25 A; T
= 80 V; V
= 0 V; T
GS
GS
= V
= V
= V
= 1.8 Ω; V
GS
GS
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
j
= 25 °C
j
j
j
j
j
GS
j
= -55 °C
= 175 °C
= 25 °C
= 175 °C
= 25 °C
j
GS
= 25 °C
j
j
= 25 °C
j
j
= 175 °C
= 25 °C
= 10 V;
= -55 °C
= 25 °C
j
= 10 V;
= 25 °C
GS
N-channel TrenchMOS standard level FET
= 0 V;
Min
89
100
-
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PHB45NQ10T
Typ
-
-
-
-
3
-
0.05
0.02
0.02
-
22
61
13
25
2600
340
195
18
72
69
58
3.5
7.5
0.87
82
0.26
© NXP B.V. 2010. All rights reserved.
-
Max
-
-
6
-
4
500
10
100
100
68
25
-
-
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
µC
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