PHB45NQ10T,118 NXP Semiconductors, PHB45NQ10T,118 Datasheet - Page 6

• Manufacturer Part Number: PHB45NQ10T,118
• Description: MOSFET N-CH 100V 47A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB45NQ10T,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 150W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055802118::PHB45NQ10T /T3::PHB45NQ10T /T3

NXP Semiconductors
PHB45NQ10T
Product data sheet
Fig 6.
Fig 8.
Fig 10. Normalized drain-source on-state resistance
(A)
(A)
I
I
a
D
D
2.9
2.1
1.3
0.5
40
30
20
10
50
40
30
20
10
0
0
−60
function of drain-source voltage; typical values
function of gate-source voltage; typical values
factor as a function of junction temperature
T
Output characteristics: drain current as a
V
Transfer characteristics: drain current as a
0
0
j
DS
= 25 °C
> I
D
0.4
x R
DSon
20
2
0.8
V
8
6
GS
T
j
= 175 °C
(V) = 10
1.2
100
4
V
1.6
T
T
All information provided in this document is subject to legal disclaimers.
GS
j
j
014aab206
014aab208
014aab210
(°C)
4.8
= 25 °C
4.6
4.4
V
5
4
(V)
DS
4.2
(V)
180
2
6
Rev. 02 — 8 July 2010
Fig 7.
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
R
V
DS(on)
GS(th)
(Ω)
(S)
(V)
g
0.16
0.12
0.08
0.04
fs
50
40
30
20
10
0
0
5
4
3
2
1
0
-60
0
of drain current; typical values
drain current; typical values
junction temperature
T
Drain-source on-state resistance as a function
V
Forward transconductance as a function of
I
0
D
j
4 4.2
DS
N-channel TrenchMOS standard level FET
= 25 °C
= 1 mA; V
> I
D
10
4
x R
4.4
DSon
DS
20
= V
20
4.6
8
maximum
GS
minimum
PHB45NQ10T
typical
12
30
4.8
100
T
T
j
j
= 25 °C
= 175 °C
V
GS
© NXP B.V. 2010. All rights reserved.
T
16
40
j
014aab207
014aab209
014aab211
(°C)
(V) = 10
I
I
D
D
(A)
(A)
6
8
5
180
20
50
6 of 12