PHB45NQ10T,118 NXP Semiconductors, PHB45NQ10T,118 Datasheet - Page 7

• Manufacturer Part Number: PHB45NQ10T,118
• Description: MOSFET N-CH 100V 47A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB45NQ10T,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 150W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055802118::PHB45NQ10T /T3::PHB45NQ10T /T3

NXP Semiconductors
PHB45NQ10T
Product data sheet
Fig 12. Sub-threshold drain current as a function of
Fig 14. Gate-source voltage as a function of gate
(A)
l
D
V
(V)
10
10
10
10
10
10
GS
16
12
−1
−2
−3
−4
−5
−6
8
4
0
gate-source voltage
charge; typical values
T
T
0
5
j
j
= 25 °C; V
= 25 °C; I
minimum
1
20
V
DD
D
DS
= 45 A
= 20 V
= V
2
GS
40
typical
3
V
DD
60
= 80 V
maximum
All information provided in this document is subject to legal disclaimers.
4
Q
014aab212
014aab214
V
G
GS
(nC)
(V)
80
5
Rev. 02 — 8 July 2010
Fig 13. Input, output and reverse transfer capacitances
Fig 15. Source (diode forward) current as a function of
(A)
I
(pF)
F
10
10
10
C
10
50
40
30
20
10
0
4
3
2
10
as a function of drain-source voltage; typical
values
source-drain (diode forward) voltage; typical
values
V
V
0
−1
GS
GS
N-channel TrenchMOS standard level FET
= 0 V; f = 1 MHz
= 0 V
T
0.4
1
j
= 175 °C
PHB45NQ10T
0.8
10
T
V
V
j
© NXP B.V. 2010. All rights reserved.
SDS
= 25 °C
DS
014aab213
014aab215
(V)
(V)
C
C
C
oss
rss
iss
10
1.2
2
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