PHB45NQ10T,118 NXP Semiconductors, PHB45NQ10T,118 Datasheet - Page 9

• Manufacturer Part Number: PHB45NQ10T,118
• Description: MOSFET N-CH 100V 47A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB45NQ10T,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 150W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055802118::PHB45NQ10T /T3::PHB45NQ10T /T3

NXP Semiconductors
8. Revision history
Table 7.
PHB45NQ10T
Product data sheet
Document ID
PHB45NQ10T v.2
Modifications:
PHB_PHP_PHW45NQ10T v.1 19990801
Revision history
Release date
20100708
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•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number PHB45NQ10T separated from data sheet PHB_PHP_PHW45NQ10T v.1.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 8 July 2010
Data sheet status
Product data sheet
Product specification -
N-channel TrenchMOS standard level FET
Change notice Supersedes
-
PHB45NQ10T
PHB_PHP_PHW45NQ10T v.1
-
© NXP B.V. 2010. All rights reserved.
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