RDN080N25FU6 Rohm Semiconductor, RDN080N25FU6 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single RDN080N25FU6
Manufacturer Part Number
RDN080N25FU6
Description
MOSFET N-CH 250V 8A T0-220FN
Manufacturer
Rohm Semiconductor
Specifications of RDN080N25FU6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
543pF @ 10V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220FN-3 (Straight Leads)
Resistance Drain-source Rds (on)
0.38 Ohms
Drain-source Breakdown Voltage
250 V
Continuous Drain Current
8 A
Power Dissipation
35 W
Mounting Style
Through Hole
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
RDN080N25FU6
Manufacturer:
Rohm Semiconductor
Part Number:
RDN080N25FU6
Part Number:
RDN080N25FU6
Transistors
Switching (250V, 8A)
RDN080N25
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
Switching
Silicon N-channel
MOS FET
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain
Current
Avalanche Current
Avalanche Energy
Total Power Dissipation (T
Channel Temperature
Storage Temperature
1 Pw
2 L 4.5mH, V
Features
Application
Structure
Absolute maximum ratings (Ta=25 C)
10 s, Duty cycle
Parameter
DD
50V, R
G
1%
25 , 1Pulse, Tch 25 C
Continuous
Pulsed
Continuous
Pulsed
C
25 C)
Symbol
V
V
I
E
T
I
T
I
DRP
I
P
I
DSS
GSS
DP
DR
AS
D
AS
stg
ch
D
1
1
2
2
55 to 150
Limits
250
136
150
32
32
35
30
8
8
8
Unit
mJ
W
V
V
A
A
A
A
A
C
C
External dimensions (Units : mm)
(1) Gate
(2) Drain
(3) Source
TO-220FN
2.54 0.5
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
1.2
Equivalent Circuit
(1)
10.0
(2) (3)
0.3
0.1
Gate
2.54 0.5
1.3
0.8
3.2 0.2
Gate
Protection
Diode
0.75
0.1
0.05
4.5
RDN080N25
0.3
0.1
Drain
2.8
2.6 0.5
Source
0.2
0.1
1/3
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RDN080N25FU6 Summary of contents
Transistors Switching (250V, 8A) RDN080N25 Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. Application Switching Structure Silicon N-channel MOS FET Absolute maximum ratings (Ta=25 C) Parameter Symbol Drain-Source Voltage V DSS Gate-Source ...
Transistors Electrical characteristics (Ta=25 C) Symbol Parameter I Gate-Source Leakage V Drain-Source Breakdown Voltage (BR) DSS I Zero Gate Voltage Drain Current V Gate Threshold Voltage GS (th) Static Drain-Source On-State R DS (on) Resistance Forward Transfer Admittance C Input ...
Transistors 1 V 10V GS 0.9 Pulsed 0.8 0.7 0 0.5 4A 0.4 0.3 0.2 0 100 125 150 CHANNEL TEMPERATURE : Fig.7 Static Drain-Source On-State ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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