BUK9606-75B,118 NXP Semiconductors, BUK9606-75B,118 Datasheet - Page 6

• Manufacturer Part Number: BUK9606-75B,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9606-75B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057114118::BUK9606-75B /T3::BUK9606-75B /T3

NXP Semiconductors
6. Characteristics
Table 6.
BUK9606-75B
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 February 2011
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
V
see
V
V
see
I
T
V
T
V
R
from drain lead 6 mm from package
to centre of die ; T
from upper edge of drain mounting
base to centre of die ; T
from source lead to source bond
pad ; T
I
see
I
V
D
D
D
D
D
D
S
S
j
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
G(ext)
GS
= 25 °C; see
= 25 °C; see
= 40 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
Figure 10
Figure 10
Figure 10
Figure
Figure
Figure 15
= 75 V; V
= 75 V; V
= 30 V; R
= 15 V; V
= -15 V; V
= 4.5 V; I
= 5 V; I
= 10 V; I
= 5 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
j
= 25 °C
11; see
11; see
D
D
GS
DS
S
DS
DS
DS
DS
D
/dt = -100 A/µs;
D
= 25 A; T
= 25 A; T
GS
GS
DS
L
DS
DS
= 25 A; T
= 60 V; V
= 0 V; T
= V
= V
= V
= 25 A; T
= 1.2 Ω; V
GS
GS
Figure 13
= 25 V; f = 1 MHz;
Figure 14
j
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 25 V; T
j
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 12
Figure 12
= 25 °C
; T
; T
; T
j
j
j
= 25 °C;
= 175 °C;
= 25 °C;
j
j
j
j
j
GS
j
j
j
j
= 25 °C
= 25 °C;
= 175 °C;
= -55 °C;
= 25 °C
j
= 25 °C
GS
= 175 °C
= 25 °C
= 25 °C
= 25 °C
j
j
j
= 5 V;
= 25 °C
= -55 °C
= 25 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK9606-75B
Min
75
70
1.1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
-
0.02
2
2
-
-
4.7
5.2
95
17
37
8770
842
336
68
144
273
116
4.5
2.5
7.5
0.85
68
176
© NXP B.V. 2011. All rights reserved.
1010
460
-
Max
-
-
2
-
2.3
500
1
100
100
6.6
12.8
5.5
6.1
-
-
-
11693 pF
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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