BUK7109-75AIE,118 NXP Semiconductors, BUK7109-75AIE,118 Datasheet - Page 7

• Manufacturer Part Number: BUK7109-75AIE,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7109-75AIE,118

• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Current Sensing
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 121nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 272000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057281118; BUK7109-75AIE /T3; BUK7109-75AIE /T3

NXP Semiconductors
Table 6.
BUK7109-75AIE_2
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
R DSon
(mΩ)
350
280
210
140
(A)
I D
20
15
10
70
0
5
0
function of drain-source voltage; typical values
of drain current; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
V GS = 5.5V
20
10
2
100
9
4
6 V
8.5
…continued
200
8
6.5V
6
label is V GS (V)
7 V
Conditions
I
see
I
V
S
S
300
DS
= 25 A; V
= 20 A; dI
8 V
8
10 V
Figure 16
= 30 V; T
20 V
I D (A)
V DS (V)
03ni80
03ni81
7.5
6.5
5.5
4.5
7
5
6
400
10
Rev. 02 — 10 February 2009
GS
S
/dt = -100 A/µs; V
j
= 25 °C
= 0 V; T
j
= 25 °C;
Fig 6.
Fig 8.
R DSon
(mΩ)
a
GS
2.4
1.6
0.8
16
14
12
10
8
6
0
−60
= -10 V;
of gate-source voltage; typical values
factor as a function of junction temperature
Drain-source on-state resistance as a function
Normalized drain-source on-state resistance
5
N-channel TrenchPLUS standard level FET
0
10
BUK7109-75AIE
Min
-
-
-
60
15
Typ
0.85
75
270
120
V GS (V)
© NXP B.V. 2009. All rights reserved.
T
03ni82
j
Max
1.2
-
-
(°C)
03nb25
20
180
Unit
V
ns
nC
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