APT5040KFLLG Microsemi Power Products Group, APT5040KFLLG Datasheet - Page 2

• Manufacturer Part Number: APT5040KFLLG
• Description: MOSFET N-CH 500V 17A TO-220
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT5040KFLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1006pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
I
R
R
t
dv
C
t
V
C
Q
RRM
C
I
Q
Q
d(off)
E
E
d(on)
E
E
SM
t
Q
I
SD
S
rr
oss
t
t
/
rss
iss
on
off
on
off
gs
gd
rr
r
JC
JA
f
dt
g
0.60
0.50
0.40
0.30
0.20
0.10
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
S
S
S
-5
= -I
= -I
= -I
FIGURE 9a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
D
D
D
0.05
0.9
0.7
0.5
0.3
0.1
17A,
17A,
17A,
di
di
di
/
/
/
dt
dt
dt
= 100A/µs, V
= 100A/µs, V
= 100A/µs, V
10
3
-4
dv
1
2
/
dt
(Body Diode)
(V
5
6
6
GS
R
R
R
SINGLE PULSE
= 0V, I
= 333V)
= 333V)
= 333V)
RECTANGULAR PULSE DURATION (seconds)
S
10
= -I
-3
D
17A)
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
DD
Test Conditions
DD
dv
device itself.
I
I
D
D
I
I
D
D
/
= 333V, V
= 17A, R
= 17A, R
dt
= 333V V
V
= 17A @ 25°C
V
= 17A @ 25°C
V
V
V
R
V
f = 1 MHz
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
T
T
T
T
T
T
G
GS
j
j
j
j
j
j
= 0.6
= 250V
= 250V
= 25°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
10
= 25V
= 15V
= 10V
= 0V
j
-2
= +25°C, L = 2.94mH, R
G
G
GS
GS
= 5
= 5
= 15V
I
S
= 15V
-
I
D
17A
di
/
Note:
dt
MIN
MIN
Peak T J = P DM x Z JC + T C
MIN
10
Duty Factor D =
-1
700A/µs
G
t 1
= 25 , Peak I
1299
1006
TYP
TYP
212
272
853
234
198
TYP
7.8
t 2
16
26
14
18
73
26
47
9
8
9
4
2
V
R
t 1
/ t 2
V
DSS
1110
1690
MAX
MAX
MAX
280
350
TBD
APT5040KFLL
1.3
L
17
68
15
10
12
.50
1.0
= 17A
T
J
150
Amps
Amps
UNIT
Volts
V/ns
UNIT
°C/W
UNIT
µC
ns
nC
°
pF
ns
µ
C
J