APT5016BFLLG Microsemi Power Products Group, APT5016BFLLG Datasheet
APT5016BFLLG
Specifications of APT5016BFLLG
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APT5016BFLLG Summary of contents
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POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power MOS 7 combines ...
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DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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RC MODEL Junction temp. (°C) 0.0174 Power 0.143 (watts) 0.219 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 V DS > (ON (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 ...
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OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA ...
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Gate Voltage d(on Drain Current 90 Drain Voltage Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions D.U.T. Figure 20, Inductive Switching ...