IRFH5302TRPBF International Rectifier, IRFH5302TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5302TRPBF
• Description: MOSFET N-CH 30V 32A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5302TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 15V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000.0
100.0
200
160
120
10.0
80
40
1.0
0.1
0
25
0.2
Fig 9. Maximum Drain Current Vs.
0.001
0.01
T J = 150°C
0.1
Case (Bottom) Temperature
10
1
1E-006
V SD , Source-to-Drain Voltage (V)
0.4
50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
T C , Case Temperature (°C)
D = 0.50
0.6
0.20
0.10
0.05
0.02
0.01
LIMITED BY PACKAGE
75
T J = 25°C
SINGLE PULSE
( THERMAL RESPONSE )
0.8
100
1E-005
1.0
V GS = 0V
125
1.2
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
0.001
Fig 10. Threshold Voltage Vs. Temperature
10000
3.0
2.5
2.0
1.5
1.0
0.5
1000
100
0.1
10
-75 -50 -25
1
Fig 8. Maximum Safe Operating Area
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
T J , Temperature ( °C )
0
0.01
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
25
1msec
50
10msec
75
10
I D = 1.0A
I D = 1.0mA
I D = 250µA
I D = 100µA
100 125 150 175
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0.1
100µsec
100