IXTY01N100D IXYS, IXTY01N100D Datasheet
IXTY01N100D
Manufacturer Part Number
IXTY01N100D
Description
MOSFET N-CH 1000V 0.1A TO-252AA
Manufacturer
IXYS
Datasheet
1.IXTU01N100D.pdf
(2 pages)
Specifications of IXTY01N100D
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
80 Ohm @ 50mA, 0V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
5V @ 25µA
Input Capacitance (ciss) @ Vds
120pF @ 25V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Vds, Max, (v)
1000
Id(on), Min, (a)
-
Rds(on), Max, (?)
80
Vgs(off), Max, (v)
-4.5
Ciss, Typ, (pf)
100
Crss, Typ, (pf)
2
Qg, Typ, (nc)
5.8
Pd, (w)
25
Rthjc, Max, (ºc/w)
-
Package Style
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTY01N100D
Manufacturer:
IXYS
Quantity:
18 000
High Voltage MOSFET
Symbol
V
V
V
V
I
I
P
T
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
I
N-Channel, Depletion Mode
© 2006 IXYS All rights reserved
DSX(off)
D(on)
DSS
DM
GSS
stg
L
Preliminary Data Sheet
J
JM
ISOL
GS(off)
DSX
DGX
GS
GSM
D
DSX
DS(on)
d
(T
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
1.6 mm (0.063 in.) from case for 10 s
Plastic case for 10 s (IXTU)
Mounting torque
Test Conditions
V
V
V
V
V
V
J
J
C
C
C
A
GS
GS
GS
DS
DS
GS
= 25°C to 150°C
= 25°C to 150°C
= 25°C; T
= 25°C
= 25°C
= 25°C, pulse width limited by T
= -10 V, I
= 25V, I
= ± 20 V
= V
= 0 V, I
= 0 V, V
DSX
, V
D
D
J
DS
DC
= 50 mA
= 25°C to 150°C
D
= 25 μA
GS
, V
= 25 μA
= 25V
= -10 V
DS
= 0
Note 1
T
Note 1
TO-220
TO-220
TO-251
TO-252
J
= 125°C
J
IXTP 01N100D
IXTU 01N100D
IXTY 01N100D
1000
min.
-2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
100
typ.
1.3 / 10
90
1000
1000
± 20
± 30
100
400
150
300
300
1.1
0.8
0.8
25
4
max.
±100
250
110
10
-5
Nm/lb.
mA
mA
mA
°C
°C
°C
°C
°C
nA
μA
μA
W
W
Ω
V
V
V
V
g
g
g
V
V
Features
Applications
TO-220 (IXTP)
TO-251 (IXTU)
TO-252 (IXTY)
Pins: 1 - Gate
Normally ON mode
Low R
Rugged polysilicon gate cell structure
Fast switching speed
Level shifting
Triggers
Solid state relays
Current regulators
V
I
R
G
D25
D
DSS
DS(on)
3 - Source TAB - Drain
S
DS (on)
G
G
D S
S
HDMOS
= 1000
= 100 mA
= 110
2 - Drain
D (TAB)
TM
D (TAB)
process
98809B (01/06)
D (TAB)
Ω Ω Ω Ω Ω
V
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IXTY01N100D Summary of contents
Page 1
... GSS -10 V DSX(off) DS DSX DS(on 25V D(on © 2006 IXYS All rights reserved IXTP 01N100D IXTU 01N100D IXTY 01N100D Maximum Ratings 1000 1000 ± 20 ± 30 100 400 J 25 1.1 -55 ... +150 150 -55 ... +150 300 300 TO-220 1 TO-220 4 TO-251 0.8 TO-252 0.8 Characteristic Values min ...
Page 2
... Note1: Pulse test, t ≤ 300 μs, duty cycle d ≤ TO-252 AA Outline Pins Gate 2 - Drain 3 - Source TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 ...