STP36NF06FP STMicroelectronics, STP36NF06FP Datasheet - Page 3

• Manufacturer Part Number: STP36NF06FP
• Description: MOSFET N-CH 60V 18A TO-220FP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP36NF06FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 40mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP36NF06 - STP36NF06FP
1
Electrical ratings
Table 1.
1.
2. Pulse width limited by safe operating area.
3. I
4. Starting T
Table 2.
1. 1.6 mm from case, for 10 sec.
Rthj-case
Rthj-amb
Symbol
dv/dt
E
Current limited by package’s thermal resistance
SD
I
V
DM
V
V
T
P
AS
T
I
I
T
ISO
GS
≤ 36A, di/dt ≤ 400A/µs, V
DS
stg
D
D
J
tot
j
(2)
(4)
(3)
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Insulation withstand voltage
three leads to external heat
(t = 1s; Tc = 25°C)
Storage temperature
Max. operating junction temperature
D
(1)
= 18A, V
DD
≤ V
DD
Parameter
(BR)DSS
= 45V
C
= 25°C
GS
, Tj ≤ T
= 0)
JMAX
C
C
= 25°C
= 100°C
TO-220
0.47
120
30
21
70
--
-55 to 175
TO-220
2.14
Value
± 20
200
60
20
TO-220FP
62.5
300
2500
18
12
0.17
72
25
(1)
(1)
Electrical ratings
TO-220FP
6
W/°C
V/ns
Unit
mJ
°C
W
V
V
A
A
A
V
°C/W
°C/W
°C
3/14