IXTP1R6N50P IXYS, IXTP1R6N50P Datasheet - Page 4
IXTP1R6N50P
Manufacturer Part Number
IXTP1R6N50P
Description
MOSFET N-CH 500V 1.6A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXTY1R6N50P.pdf
(5 pages)
Specifications of IXTP1R6N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
5.5V @ 25µA
Gate Charge (qg) @ Vgs
3.9nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
43W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.5 Ohms
Forward Transconductance Gfs (max / Min)
1.3 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.6 A
Power Dissipation
43 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
1.6
Rds(on), Max, Tj=25°c, (?)
6.5
Ciss, Typ, (pf)
140
Qg, Typ, (nc)
3.9
Trr, Typ, (ns)
400
Pd, (w)
43
Rthjc, Max, (k/w)
2.9
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTP1R6N50P
Manufacturer:
IXYS
Quantity:
18 000
IXYS reserves the right to change limits, test conditions, and dimensions.
1000
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
1
0.5
0
4
f = 1MHz
5
4.5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
0.6
Source-To-Drain Voltage
T
10
J
= 125
-40
T
25
J
V
V
15
5
= 125
V
º
º
º
S D
G S
C
C
C
D S
0.7
- Volts
- Volts
º
20
- Volts
C
5.5
C iss
C oss
C rss
25
0.8
6
30
T
J
= 25
0.9
35
6.5
º
C
40
0.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
10
1
9
8
7
6
5
4
3
2
1
0
10
0
0
R
0.3
V
I
I
0.5
DS(on)
D
G
DS
Fig. 8. Transconductance
= 0.8A
= 10mA
= 250V
Fig. 10. Gate Charge
0.6
Fig. 12. Forw ard-Bias
Safe Operating Area
Limit
1
Q
G
0.9
I
1.5
T
D
- nanoCoulombs
V
J
- Amperes
= -40
D S
125
DC
25
100
1.2
- Volts
2
º
º
º
C
C
C
IXTP 1R6N50P
IXTY 1R6N50P
1.5
2.5
1.8
T
T
3
J
C
= 150
= 25
2.1
3.5
º
100µs
1ms
25µs
10ms
º
C
C
1000
2.4
4